rev. date: 16-aug- 11 ksd-t6q010-000 www .auk.co.kr 1 of 8 SMN03T80IS advanced n-ch power mosfet switching regulator application features ? bv dss =800v min. ? low gate charge: q g =19nc (typ.) ? low drain-source on resistance: r ds(on) =4.2 ? (max.) ? rohs compliant device ? 100% avalanche tested ordering information part number marking package SMN03T80IS smn03t80 i-pak (short lead) marking information absolute maximum ratings (t c =25 ? c unless otherwise noted) characteristic symbol rating unit drain-source voltage v dss 800 v gate-source voltage v gss ? 30 v drain current (dc) * i d t c =25 ? c 3 a t c =100 ? c 1.83 a drain current (pulsed) * i dm 12 a single pulsed avalanche energy (note 2) e as 200 mj repetitive avalanche current (note 1) i ar 3 a repetitive avalanche energy (note 1) e ar 7 mj power dissipation p d 70 w peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns junction temperature t j 150 ? c storage temperature range t stg -55~150 ? c * limited only maximum junction temperature column 1, 2: device code column 3: production information e.g.) yww -. yww: date code (year, week) smn 03t80 yww i-pak g d s
rev. date: 16-aug- 11 ksd-t6q010-000 www .auk.co.kr 2 of 8 thermal characteristics characteristic symbol rating unit thermal resistance, junction to case r th(j-c) max. 1.78 ? c/w thermal resistance, junction to ambient r th(j-a) max. 110 electrical characteristics (t c =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250ua, v gs =0 800 - - v gate threshold voltage v gs(th) i d =250ua, v ds =v gs 2 - 4 v drain-source cut-off current i dss v ds =800v, v gs =0v - - 10 ua v ds =640v, t c =125 ? c - - 100 ua gate leakage current i gss v ds =0v, v gs = ? 30v - - ? 100 na drain-source on-resistance r ds(on) v gs =10v, i d =1.5a - 3.36 4.2 ? forward transfer conductance (note 4) g fs v ds =30v, i d =1.5a - 3.7 - s input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 696 - pf output capacitance c oss - 65 - reverse transfer capacitance c rss - 10.2 - turn-on delay time (note 4,5) t d(on) v dd =400v, i d =3a r g =25 ? - 48 - ns rise time (note 4,5) t r - 36 - turn-off delay time (note 4,5) t d(off) - 106 - fall time (note 4,5) t f - 41 - total gate charge (note 4,5) q g v ds =640v, v gs =10v i d =3a - 19 - nc gate-source charge (note 4,5) q gs - 4 - gate-drain charge (note 4,5) q gd - 7.6 - source-drain diode ratings and characteristics (t c =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit source current (dc) i s integral reverse diode in the mosfet - - 3 a source current (pulsed) i sm - - 12 a forward voltage v sd v gs =0v, i s =3a - - 1.5 v reverse recovery time (note 4,5) t rr i s =3a, v gs =0v di f /dt=100a/us - 372 - ns reverse recovery charge (note 4,5) q rr - 1.8 - uc note: 1. repeated rating: pulse width limited by safe operating area 2. l=42mh, i as =3a, v dd =50v, r g =25 ? , starting t j =25 ? c 3. i sd 3a, di/dt 200a/us, v dd bv dss , starting t j =25 ? c 4. pulse test: pulse width 300us, duty cycle 2% 5. essentially independent of operati ng temperature typical characteristics SMN03T80IS
rev. date: 16-aug- 11 ksd-t6q010-000 www .auk.co.kr 3 of 8 electrical characteristic curves SMN03T80IS fig. 1 i d - v ds fig. 2 i d ? v gs fig. 3 r ds(on) - i d fig. 4 i dr - v sd fig. 5 capacitance - v ds fig. 6 v gs - q g
rev. date: 16-aug- 11 ksd-t6q010-000 www .auk.co.kr 4 of 8 electrical characteristic curves (continue) fig. 7 bv dss - t j fig. 8 r ds(on) - t j fig. 9 i d - t c fig. 10 v gs(th) ? t j fig. 11 safe operating area fig. 12 z th(j-c) - t SMN03T80IS duty = t / t
rev. date: 16-aug- 11 ksd-t6q010-000 www .auk.co.kr 5 of 8 fig. 13 gate charge test circuit & waveform fig. 14 resistive switching test circuit & waveform fig. 15 e as test circuit & waveform SMN03T80IS
rev. date: 16-aug- 11 ksd-t6q010-000 www .auk.co.kr 6 of 8 fig. 16 diode reverse recovery time test circuit & waveform SMN03T80IS
rev. date: 16-aug- 11 ksd-t6q010-000 www .auk.co.kr 7 of 8 package outline dimensions SMN03T80IS
rev. date: 16-aug- 11 ksd-t6q010-000 www .auk.co.kr 8 of 8 the auk corp. products are intended for the use as components in general electronic equipment (office and communication e quipment, measuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safet y device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice. SMN03T80IS
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